☑ Germanium Diode Barrier Potential

The potential difference required to move the electrons through the electric field is called the barrier potential. For silicon diodes the built in potential is approximately 07 v 03 v for germanium and 02 v for schottky.

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Barrier potential for germanium silicon and gallium arsenide.

Germanium diode barrier potential. Barrier voltage allows minority carriers. In germanium about 15 volts. Barrier potential of a pn junction depends on the type of semiconductor material.

At 25c degrees electrons in n region in germanium must have more energy than electrons in silicon because less energy required to remove electron from an atom more electrons can drift to p region thus barrier potential for germanium should be higher however. The barrier voltage at the p n junction opposes only the flow of majority charge carriers. When a diode is zero biased no external energy source is applied and a natural potential barrier is developed across a depletion layer which is approximately 05 to 07v for silicon diodes and approximately 03 of a volt for germanium diodes.

The ions in this depletion layer produce a barrier potential. Where did the barrier potentials for germanium 03v silicon 07v and germanium arsenide 12v come from. When a junction diode is forward biased the thickness of the depletion region reduces and the diode acts like a short circuit allowing full current to flow.

Germanium has 32 electrons and 4 on the 4th level. The electrons and holes create a potential barrier but as this voltage will not supply current it cannot be used as a voltage source. But my professor asked us to find for the derivation of those potential barriers.

In silicon about 07 volts. The barrier voltage for silicon diode is 07 volts and for germanium is 03 volts. The potential barrier of a diode is caused by the movement of electrons to create holes.

An unbiased diode has a depletion layer at the pn junction. Ask question asked 4 years. Thus if an external voltage greater than and opposite to the built in voltage is applied a current will flow and the diode is said to be turned on as it has been given an external forward bias.

Endgroup kedjil jun 20 15 at 248. At room temperature this barrier potential is approximately 07 v for a silicon diode and 03 v for a germanium diode. Let me fill some for this.

For the silicon diode barrier potential voltage is about 065 v for the germanium diode is about 025 v.